Low-voltage-operating fullerene C60 thin-film transistors with various surface treatments

Low-voltage-operating fullerene C60 thin-film transistors with various surface treatments

Influence of surface treatment on fullerene C60 thin‐film transistors (TFTs) has been investigated. Phenyltrimethoxysilane (PTS), Hexamethyldisilazane (HMDS) and octadecyltrimethoxysilane (ODS) were used for the surface treatment. The treated surface was investigated by water‐contact‐angle measureme...

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Veröffentlicht in:Physica status solidi. C 2008-07, Vol.5 (9), p.3181-3183
Hauptverfasser: Kitamura, Masatoshi, Kuzumoto, Yasutaka, Kamura, Masakazu, Aomori, Shigeru, Na, Jong Ho, Arakawa, Yasuhiko
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container_end_page 3183
container_issue 9
container_start_page 3181
container_title Physica status solidi. C
container_volume 5
creator Kitamura, Masatoshi
Kuzumoto, Yasutaka
Kamura, Masakazu
Aomori, Shigeru
Na, Jong Ho
Arakawa, Yasuhiko
description Influence of surface treatment on fullerene C60 thin‐film transistors (TFTs) has been investigated. Phenyltrimethoxysilane (PTS), Hexamethyldisilazane (HMDS) and octadecyltrimethoxysilane (ODS) were used for the surface treatment. The treated surface was investigated by water‐contact‐angle measurement and the C60 deposited on the surface was observed with scanning electron microscope. As a result, C60 TFT with the ODS‐treated insulator exhibited the highest field‐effect mobility of 1.46 cm2/Vs. In addition, the TFTs operated at a low voltage of 5 V by adopting high‐dielectric‐constant gate insulator. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
doi_str_mv 10.1002/pssc.200779209
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81.10.Bk
81.65.−b
85.30.Tv
85.65.+h
title Low-voltage-operating fullerene C60 thin-film transistors with various surface treatments
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