Low-voltage-operating fullerene C60 thin-film transistors with various surface treatments

Influence of surface treatment on fullerene C60 thin‐film transistors (TFTs) has been investigated. Phenyltrimethoxysilane (PTS), Hexamethyldisilazane (HMDS) and octadecyltrimethoxysilane (ODS) were used for the surface treatment. The treated surface was investigated by water‐contact‐angle measureme...

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Veröffentlicht in:	Physica status solidi. C 2008-07, Vol.5 (9), p.3181-3183
Hauptverfasser:	Kitamura, Masatoshi, Kuzumoto, Yasutaka, Kamura, Masakazu, Aomori, Shigeru, Na, Jong Ho, Arakawa, Yasuhiko
Format:	Artikel
Sprache:	eng
Schlagworte:	81.05.Tp 81.10.Bk 81.65.−b 85.30.Tv 85.65.+h
Online-Zugang:	Volltext
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Zusammenfassung:	Influence of surface treatment on fullerene C60 thin‐film transistors (TFTs) has been investigated. Phenyltrimethoxysilane (PTS), Hexamethyldisilazane (HMDS) and octadecyltrimethoxysilane (ODS) were used for the surface treatment. The treated surface was investigated by water‐contact‐angle measurement and the C60 deposited on the surface was observed with scanning electron microscope. As a result, C60 TFT with the ODS‐treated insulator exhibited the highest field‐effect mobility of 1.46 cm2/Vs. In addition, the TFTs operated at a low voltage of 5 V by adopting high‐dielectric‐constant gate insulator. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:	1862-6351 1610-1634 1610-1642
DOI:	10.1002/pssc.200779209