Effects of nitrogen-doping on the microstructure, bonding and electrochemical activity of carbon nanotubes

Vertically aligned carbon nanotubes produced with in-situ doping of nitrogen (CN x NTs) during chemical vapor deposition exhibit unique structural and electrochemical properties, which are strongly correlated with their nitrogen (N) doping level. In this work, the effects of N-doping on CN x NTs hav...

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Veröffentlicht in:Diamond and related materials 2009-02, Vol.18 (2), p.433-437
Hauptverfasser: Lin, Y.G., Hsu, Y.K., Wu, C.T., Chen, S.Y., Chen, K.H., Chen, L.C.
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Sprache:eng
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Zusammenfassung:Vertically aligned carbon nanotubes produced with in-situ doping of nitrogen (CN x NTs) during chemical vapor deposition exhibit unique structural and electrochemical properties, which are strongly correlated with their nitrogen (N) doping level. In this work, the effects of N-doping on CN x NTs have been systematically investigated via microstructure and bonding studies, electron-transfer (ET) behaviors, and subsequent electrochemical deposition of catalyst. The CN x NTs doped with an optimal N level, while showing a nearly reversible ET behavior, in fact exhibit uniform and high density of surface defects. These surface defects are desirable for further modification and/or nucleation of catalytic particles on the surface of CN x NTs to form a composite electrode for electrochemical energy device applications such as fuel cells and capacitors.
ISSN:0925-9635
1879-0062
DOI:10.1016/j.diamond.2008.09.009