Effects of nitrogen-doping on the microstructure, bonding and electrochemical activity of carbon nanotubes
Vertically aligned carbon nanotubes produced with in-situ doping of nitrogen (CN x NTs) during chemical vapor deposition exhibit unique structural and electrochemical properties, which are strongly correlated with their nitrogen (N) doping level. In this work, the effects of N-doping on CN x NTs hav...
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Veröffentlicht in: | Diamond and related materials 2009-02, Vol.18 (2), p.433-437 |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Vertically aligned carbon nanotubes produced with in-situ doping of nitrogen (CN
x
NTs) during chemical vapor deposition exhibit unique structural and electrochemical properties, which are strongly correlated with their nitrogen (N) doping level. In this work, the effects of N-doping on CN
x
NTs have been systematically investigated via microstructure and bonding studies, electron-transfer (ET) behaviors, and subsequent electrochemical deposition of catalyst. The CN
x
NTs doped with an optimal N level, while showing a nearly reversible ET behavior, in fact exhibit uniform and high density of surface defects. These surface defects are desirable for further modification and/or nucleation of catalytic particles on the surface of CN
x
NTs to form a composite electrode for electrochemical energy device applications such as fuel cells and capacitors. |
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ISSN: | 0925-9635 1879-0062 |
DOI: | 10.1016/j.diamond.2008.09.009 |