Effect of Si capping layer on the interface quality and NBTI of high mobility channel Ge-on-Si pMOSFETs

The effects of a Si capping layer on the device characteristics and negative bias temperature instability (NBTI) reliability were investigated for Ge-on-Si pMOSFETs. A Ge pMOSFET with a Si cap shows a lower subthreshold slope (SS), higher transconductance ( G m) and enhanced drive current. In additi...

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Veröffentlicht in:	Microelectronic engineering 2009-03, Vol.86 (3), p.259-262
Hauptverfasser:	Yoo, Ook Sang, Oh, Jungwoo, Min, Kyung Seok, Kang, Chang Yong, Lee, B.H., Lee, Kyong Taek, Na, Min Ki, Kwon, Hyuk-Min, Majhi, P., Tseng, H-H, Jammy, Raj, Wang, J.S., Lee, Hi-Deok
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Charge pumping Electronics Exact sciences and technology Ge pMOSFET High mobility channel Interface trap NBTI Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
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