TaAl-N Thin Film Prepared by Radio Frequency and Direct Current Reactive Sputtering

The electrical characteristics of TaAl-N thin films prepared by radio frequency (RF) superimposed and direct current (DC) reactive sputtering method was investigated. The properties of TaAl-N thin films were strongly influenced by the sputtering method. In the condition of Rn=30% [Rn=F(N2)/(F(N2)+F(Ar))], total pressure 0.3 Pa, the resistivity (at RT) was 3.1 Ωcm and the TCR (at 150°C) (the temperature coefficient of the resistivity) was (-) 13000 ppm/°C. The stresses of TaAl-N thin films were relieved.