Towards 2-10 nm electron-beam lithography : A quantitative approach
This paper deals with three important contributions to quantitative electron beam patterning in the 2-10 nm regime where typically minimal probe size is comparable to feature size. First, application of an advanced knife edge structure for accurate electron beam size measurements. Secondly, optimiza...
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| Veröffentlicht in: | Microelectronic engineering 2008-05, Vol.85 (5-6), p.805-809 |
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| container_issue | 5-6 |
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| container_title | Microelectronic engineering |
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| creator | SIDORKIN, V VAN RUN, A VAN LANGEN-SUURLING, A GRIGORESCU, A VAN DER DRIFT, E |
| description | This paper deals with three important contributions to quantitative electron beam patterning in the 2-10 nm regime where typically minimal probe size is comparable to feature size. First, application of an advanced knife edge structure for accurate electron beam size measurements. Secondly, optimization of exposure procedure for optimum beam focus settings. And thirdly, investigation of the broadening effect of secondary electrons (SE) on the exposure process in the resists. The combined results provide a quantitative picture of limiting factors for the achievement of ultimate resolution. |
| doi_str_mv | 10.1016/j.mee.2008.01.024 |
| format | Article |
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First, application of an advanced knife edge structure for accurate electron beam size measurements. Secondly, optimization of exposure procedure for optimum beam focus settings. And thirdly, investigation of the broadening effect of secondary electrons (SE) on the exposure process in the resists. The combined results provide a quantitative picture of limiting factors for the achievement of ultimate resolution.</description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>SIDORKIN, V</creatorcontrib><creatorcontrib>VAN RUN, A</creatorcontrib><creatorcontrib>VAN LANGEN-SUURLING, A</creatorcontrib><creatorcontrib>GRIGORESCU, A</creatorcontrib><creatorcontrib>VAN DER DRIFT, E</creatorcontrib><collection>Pascal-Francis</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microelectronic engineering</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>SIDORKIN, V</au><au>VAN RUN, A</au><au>VAN LANGEN-SUURLING, A</au><au>GRIGORESCU, A</au><au>VAN DER DRIFT, E</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Towards 2-10 nm electron-beam lithography : A quantitative approach</atitle><jtitle>Microelectronic engineering</jtitle><date>2008-05-01</date><risdate>2008</risdate><volume>85</volume><issue>5-6</issue><spage>805</spage><epage>809</epage><pages>805-809</pages><issn>0167-9317</issn><eissn>1873-5568</eissn><coden>MIENEF</coden><abstract>This paper deals with three important contributions to quantitative electron beam patterning in the 2-10 nm regime where typically minimal probe size is comparable to feature size. 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| identifier | ISSN: 0167-9317 |
| ispartof | Microelectronic engineering, 2008-05, Vol.85 (5-6), p.805-809 |
| issn | 0167-9317 1873-5568 |
| language | eng |
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| source | Elsevier ScienceDirect Journals Complete |
| subjects | Applied sciences Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | Towards 2-10 nm electron-beam lithography : A quantitative approach |
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