Towards 2-10 nm electron-beam lithography : A quantitative approach

This paper deals with three important contributions to quantitative electron beam patterning in the 2-10 nm regime where typically minimal probe size is comparable to feature size. First, application of an advanced knife edge structure for accurate electron beam size measurements. Secondly, optimiza...

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Veröffentlicht in:	Microelectronic engineering 2008-05, Vol.85 (5-6), p.805-809
Hauptverfasser:	SIDORKIN, V, VAN RUN, A, VAN LANGEN-SUURLING, A, GRIGORESCU, A, VAN DER DRIFT, E
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Beschreibung
Zusammenfassung:	This paper deals with three important contributions to quantitative electron beam patterning in the 2-10 nm regime where typically minimal probe size is comparable to feature size. First, application of an advanced knife edge structure for accurate electron beam size measurements. Secondly, optimization of exposure procedure for optimum beam focus settings. And thirdly, investigation of the broadening effect of secondary electrons (SE) on the exposure process in the resists. The combined results provide a quantitative picture of limiting factors for the achievement of ultimate resolution.
ISSN:	0167-9317 1873-5568
DOI:	10.1016/j.mee.2008.01.024