New method for the precise flux calculation of neutrals for arbitrary surfaces in profile etch simulations

New method for the precise flux calculation of neutrals for arbitrary surfaces in profile etch simulations

A method for precise neutral flux calculation inside etched features based on a finite element method is presented. This new method yields exact results and is suitable for arbitrary profile shapes at acceptable execution speed. The model parameters are the sticking coefficients of the neutral speci...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Microelectronic engineering 2008-05, Vol.85 (5-6), p.982-984
Hauptverfasser: Hauguth, M., Danz, T., Volland, B.E., Ishshuk, V., Dreßler, D., Rangelow, I.W.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Electronics
Etching
Exact sciences and technology
Finite elements
Flux calculation
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Simulation
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A method for precise neutral flux calculation inside etched features based on a finite element method is presented. This new method yields exact results and is suitable for arbitrary profile shapes at acceptable execution speed. The model parameters are the sticking coefficients of the neutral species to the different sample materials. The model is verified against systematic plasma etching experiments of silicon.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2008.01.019