Narrow paths beyond limits of lithography

Well-controlled methods of nanopattern definition in SiO2 and Si have been developed: Lateral Pattern Definition technique in SiO2 (LPD) and Pattern Definition by Edge Oxidation technique, suitable for mono-Si and poly-Si paths (PADEOX). SEM examinations of the patterns of width of several tens of n...

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Veröffentlicht in:	Microelectronic engineering 2008-05, Vol.85 (5-6), p.1257-1260
Hauptverfasser:	Zaborowski, Michał, Grabiec, Piotr
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology LPD Microelectronic fabrication (materials and surfaces technology) Nanoscale engineering PADEOX Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Si nanowires SiO2 nanolines Transistors
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Zusammenfassung:	Well-controlled methods of nanopattern definition in SiO2 and Si have been developed: Lateral Pattern Definition technique in SiO2 (LPD) and Pattern Definition by Edge Oxidation technique, suitable for mono-Si and poly-Si paths (PADEOX). SEM examinations of the patterns of width of several tens of nm have been presented. Dependence of width of the pattern on parameters of the process has been discussed. Application of the PADEOX technique in FinFET technology has been described.
ISSN:	0167-9317 1873-5568
DOI:	10.1016/j.mee.2007.12.011