MOVPE of InN films on GaN templates grown on sapphire and silicon(111) substrates

This paper reports the study of MOVPE of InN on GaN templates grown on sapphire and silicon(111) substrates. Thermodynamic analysis of MOVPE of InN performed using NH3 as nitrogen source and the experimental findings support the droplet‐free epitaxial growth of InN under high V/III ratios of input precursors. At a growth pressure of 500 Torr, the optimum growth temperature and V/III ratio of the InN film are 575–650 °C and >3 × 105, respectively. The surface RMS roughness of InN film grown GaN/sapphire template is ∼0.3 nm on 2 μm × 2 μm area, while the RMS roughness of the InN film grown on GaN/Si (111) templates is found as ∼0.7 nm. The X‐ray diffraction (XRD) measurement reveals the (0002) texture of the InN film on GaN/sapphire template with a FWHM of 281 arcsec of the InN (0002) ω rocking curve. For the film grown on GaN/Si template under identical growth conditions, the XRD measurements show the presence of metallic In, in addition to the (0002) orientation of InN layer. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)