MOCVD Growth of InN on Si(111) with Various Buffer Layers

We report the growth of InN by metalorganic chemical vapor deposition on Si(111) substrates. It was found that the sharpest InN(002) x-ray diffraction peak could be achieved from the sample prepared on a complex buffer layer that consists of a low-temperature AlN, a graded Al x Ga 1− x N ( x = 1 →...

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Veröffentlicht in:	Journal of electronic materials 2008-08, Vol.37 (8), p.1054-1057
Hauptverfasser:	Huang, C.C., Chuang, R.W., Chang, S.J., Lin, J.C., Cheng, Y.C., Lin, W.J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Characterization and Evaluation of Materials Chemical elements Chemical vapor deposition Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Chemistry and Materials Science Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Diffraction Electronics and Microelectronics Exact sciences and technology Instrumentation Materials Science Methods of deposition of films and coatings film growth and epitaxy Mobility Optical and Electronic Materials Physics Solid State Physics Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology X-rays
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Zusammenfassung:	We report the growth of InN by metalorganic chemical vapor deposition on Si(111) substrates. It was found that the sharpest InN(002) x-ray diffraction peak could be achieved from the sample prepared on a complex buffer layer that consists of a low-temperature AlN, a graded Al x Ga 1− x N ( x = 1 → 0), and a high-temperature GaN. The resultant mobility of 275 cm 2 /V s thus obtained was 75% larger than that of the InN prepared on a single LT-AlN buffer layer only.
ISSN:	0361-5235 1543-186X
DOI:	10.1007/s11664-008-0475-7