Large electric polarization in BiFeO3 film prepared via a simple sol–gel process

BiFeO 3 film has been deposited on Pt/Ti/SiO 2 /Si substrate by a simple sol–gel process annealed at 500 °C. X-ray diffraction analysis revealed that the film was fully crystallized and no impure phase was observed. Cross-section scanning electric microscopy results indicated that the thickness was...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of sol-gel science and technology 2008-08, Vol.47 (2), p.154-157
Hauptverfasser: Liu, Hongri, Wang, Xiuzhang
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:BiFeO 3 film has been deposited on Pt/Ti/SiO 2 /Si substrate by a simple sol–gel process annealed at 500 °C. X-ray diffraction analysis revealed that the film was fully crystallized and no impure phase was observed. Cross-section scanning electric microscopy results indicated that the thickness was about 600 nm. Large remanent polarization was observed. The double remanent polarization is 95.8 μC/cm 2 at an applied field of 800 kV/cm. Intense dielectric dispersion was observed above 100 kHz. At a biased electric field of 167 kV/cm, the leakage current densities were identified as ∼10 −5 to 10 −4  A/cm 2 .
ISSN:0928-0707
1573-4846
DOI:10.1007/s10971-008-1773-5