Large electric polarization in BiFeO3 film prepared via a simple sol–gel process
BiFeO 3 film has been deposited on Pt/Ti/SiO 2 /Si substrate by a simple sol–gel process annealed at 500 °C. X-ray diffraction analysis revealed that the film was fully crystallized and no impure phase was observed. Cross-section scanning electric microscopy results indicated that the thickness was...
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Veröffentlicht in: | Journal of sol-gel science and technology 2008-08, Vol.47 (2), p.154-157 |
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Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
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Zusammenfassung: | BiFeO
3
film has been deposited on Pt/Ti/SiO
2
/Si substrate by a simple sol–gel process annealed at 500 °C. X-ray diffraction analysis revealed that the film was fully crystallized and no impure phase was observed. Cross-section scanning electric microscopy results indicated that the thickness was about 600 nm. Large remanent polarization was observed. The double remanent polarization is 95.8 μC/cm
2
at an applied field of 800 kV/cm. Intense dielectric dispersion was observed above 100 kHz. At a biased electric field of 167 kV/cm, the leakage current densities were identified as ∼10
−5
to 10
−4
A/cm
2
. |
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ISSN: | 0928-0707 1573-4846 |
DOI: | 10.1007/s10971-008-1773-5 |