Fabrication of Al-doped Transparent Conducting ZnO Film on COP Substrates by PLD Method

Fabrication of Al-doped Transparent Conducting ZnO Film on COP Substrates by PLD Method

Approximately 230 nm-thick Al-doped transparent conducting zinc oxide films (AZO) have been deposited on Cyclo Olefin Polymer (COP) substrates with ZnO buffer layer fabricated under oxygen partial pressure of 0.5~5.3 Pa, by pulsed laser deposition (PLD) using ArF excimer laser (λ=193 nm). When the Z...

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Veröffentlicht in:Journal of the Vacuum Society of Japan 2008, Vol.51(3), pp.178-181
Hauptverfasser: NAKAMURA, Atsuhiro, MICHIHATA, Ryota, SUZUKI, Akio, AOKI, Takanori, MATSUSHITA, Tatsuhiko, OKUDA, Masahiro
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Sprache:jpn
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Zusammenfassung:Approximately 230 nm-thick Al-doped transparent conducting zinc oxide films (AZO) have been deposited on Cyclo Olefin Polymer (COP) substrates with ZnO buffer layer fabricated under oxygen partial pressure of 0.5~5.3 Pa, by pulsed laser deposition (PLD) using ArF excimer laser (λ=193 nm). When the ZnO buffer layer was fabricated with oxygen partial pressure of 5.3 Pa, the lowest resistivity obtained for the AZO film was 4.12×10-4 Ω•cm.
ISSN:1882-2398
1882-4749
DOI:10.3131/jvsj2.51.178