High-Performance Thin-Film Transistors from Solution-Processed Cadmium Selenide and a Self-Assembled Multilayer Gate Dielectric

High-Performance Thin-Film Transistors from Solution-Processed Cadmium Selenide and a Self-Assembled Multilayer Gate Dielectric

TFTs based on solution‐processed CdSe films as the semiconductor and a solution‐processed nanoscopic self‐assembled gate dielectric are fabricated. The devices exhibit high electron mobilities at low operating voltages.

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Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Weinheim) 2008-06, Vol.20 (12), p.2319-2324
Hauptverfasser: Byrne, Paul D., Facchetti, Antonio, Marks, Tobin J.
Format: Artikel
Sprache:eng
Schlagworte:
gate dielectrics
self-assembly
semiconductors
solution processing
thin-film transistors
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Beschreibung
Zusammenfassung:TFTs based on solution‐processed CdSe films as the semiconductor and a solution‐processed nanoscopic self‐assembled gate dielectric are fabricated. The devices exhibit high electron mobilities at low operating voltages.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.200702677