Original paper: Synthesis of nanocrystalline GaN from Ga2O3 nanoparticles derived from salt-assisted spray pyrolysis
Gallium nitride (GaN) nanoparticles were successfully produced from nano-sized gallium oxide (Ga2O3) particles under a flow of ammonia gas. The gallium oxide nanoparticles were prepared by salt-assisted spray pyrolysis (SASP). Highly crystalline Ga2O3 nanoparticles with an average diameter of approx...
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Veröffentlicht in: | Advanced powder technology : the international journal of the Society of Powder Technology, Japan Japan, 2009-01, Vol.20 (1), p.29-34 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | Gallium nitride (GaN) nanoparticles were successfully produced from nano-sized gallium oxide (Ga2O3) particles under a flow of ammonia gas. The gallium oxide nanoparticles were prepared by salt-assisted spray pyrolysis (SASP). Highly crystalline Ga2O3 nanoparticles with an average diameter of approximately 10 nm were obtained at various temperatures when a flux salt (LiCl, 5 mol/l) was added to the precursor solution. The effects of the crystallinity of the Ga2O3 particles and nitridation time on transformation to GaN were characterized using X-ray diffraction and scanning/transmission electron microscopy. Highly crystalline GaN nanoparticles with a mean size of 23.4 nm and a geometric standard deviation of 1.68 nm were obtained when Ga2O3 nanoparticles with relatively low crystallinity were used as the starting material. The resulting GaN nanoparticles showed a photoluminescence peak at 364 nm under UV excitation at 254 nm. |
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ISSN: | 0921-8831 1568-5527 |
DOI: | 10.1016/j.apt.2008.10.005 |