Preparation of copper selenide thin films by simple chemical route at low temperature and their characterization
Copper selenide thin films have been deposited using a precursor solution containing copper sulphate (0.25 M) ammonia 25% and sodium selenosulphate (0.25 M) in aqueous alkaline medium at 5 °C. The as-grown films were found to be well adherent to glass substrates and dark red in color. The films were...
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| Veröffentlicht in: | Journal of alloys and compounds 2009-02, Vol.469 (1), p.478-482 |
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| container_issue | 1 |
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| container_title | Journal of alloys and compounds |
| container_volume | 469 |
| creator | Hankare, P.P. Khomane, A.S. Chate, P.A. Rathod, K.C. Garadkar, K.M. |
| description | Copper selenide thin films have been deposited using a precursor solution containing copper sulphate (0.25
M) ammonia 25% and sodium selenosulphate (0.25
M) in aqueous alkaline medium at 5
°C. The as-grown films were found to be well adherent to glass substrates and dark red in color. The films were characterized by X-ray diffraction, scanning electron microscopy, optical absorption, electrical conductivity, and thermo-electric techniques. The analysis of optical absorption data shows energy band gap energy (
E
g) to be 2.15
eV. The electrical conductivity of copper selenide thin film was found to be of the order of 10
−3 (Ωcm)
−1. Thermo-electric power measurement shows p-type conduction mechanism. |
| doi_str_mv | 10.1016/j.jallcom.2008.02.062 |
| format | Article |
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M) ammonia 25% and sodium selenosulphate (0.25
M) in aqueous alkaline medium at 5
°C. The as-grown films were found to be well adherent to glass substrates and dark red in color. The films were characterized by X-ray diffraction, scanning electron microscopy, optical absorption, electrical conductivity, and thermo-electric techniques. The analysis of optical absorption data shows energy band gap energy (
E
g) to be 2.15
eV. The electrical conductivity of copper selenide thin film was found to be of the order of 10
−3 (Ωcm)
−1. Thermo-electric power measurement shows p-type conduction mechanism.</description><identifier>ISSN: 0925-8388</identifier><identifier>EISSN: 1873-4669</identifier><identifier>DOI: 10.1016/j.jallcom.2008.02.062</identifier><language>eng</language><publisher>Kidlington: Elsevier B.V</publisher><subject>Chemical synthesis ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electrical properties of specific thin films ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Exact sciences and technology ; Grain boundaries ; Ii-vi semiconductors ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of specific thin films ; Other semiconductors ; Physics ; Semiconductor ; Thin films ; X-ray diffraction</subject><ispartof>Journal of alloys and compounds, 2009-02, Vol.469 (1), p.478-482</ispartof><rights>2008 Elsevier B.V.</rights><rights>2009 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c370t-6dffc947ff0f4155371deb175455cc0315d3fc4878689410aa951da82093a5a3</citedby><cites>FETCH-LOGICAL-c370t-6dffc947ff0f4155371deb175455cc0315d3fc4878689410aa951da82093a5a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jallcom.2008.02.062$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=21234731$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Hankare, P.P.</creatorcontrib><creatorcontrib>Khomane, A.S.</creatorcontrib><creatorcontrib>Chate, P.A.</creatorcontrib><creatorcontrib>Rathod, K.C.</creatorcontrib><creatorcontrib>Garadkar, K.M.</creatorcontrib><title>Preparation of copper selenide thin films by simple chemical route at low temperature and their characterization</title><title>Journal of alloys and compounds</title><description>Copper selenide thin films have been deposited using a precursor solution containing copper sulphate (0.25
M) ammonia 25% and sodium selenosulphate (0.25
M) in aqueous alkaline medium at 5
°C. The as-grown films were found to be well adherent to glass substrates and dark red in color. The films were characterized by X-ray diffraction, scanning electron microscopy, optical absorption, electrical conductivity, and thermo-electric techniques. The analysis of optical absorption data shows energy band gap energy (
E
g) to be 2.15
eV. The electrical conductivity of copper selenide thin film was found to be of the order of 10
−3 (Ωcm)
−1. Thermo-electric power measurement shows p-type conduction mechanism.</description><subject>Chemical synthesis</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electrical properties of specific thin films</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Exact sciences and technology</subject><subject>Grain boundaries</subject><subject>Ii-vi semiconductors</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of specific thin films</subject><subject>Other semiconductors</subject><subject>Physics</subject><subject>Semiconductor</subject><subject>Thin films</subject><subject>X-ray diffraction</subject><issn>0925-8388</issn><issn>1873-4669</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNqFkMFKHTEUhoO04K32EQrZ2N1MTybJTGYlItoKQl24DzFzgrlkJmOSW9Gnb_Re3Lo6cPj-83M-Qn4waBmw_te23ZoQbJzbDkC10LXQd0dkw9TAG9H34xeygbGTjeJKHZNvOW8BgI2cbch6l3A1yRQfFxodtXFdMdGMARc_IS2PfqHOhznThxea_bwGpPYRZ29NoCnuClJTaIjPtOBco6bsUl0tU42iT5Wt123B5F_fS07JV2dCxu-HeULur6_uL_80t39_31xe3DaWD1CafnLOjmJwDpxgUvKBTfjABimktBY4kxN3VqhB9WoUDIwZJZuM6mDkRhp-Qn7uz64pPu0wFz37bDEEs2DcZc25ENBzqKDcgzbFnBM6vSY_m_SiGeg3vXqrD3r1m14Nna56a-7sUGByVeGSWazPH-GOdVwMnFXufM9hffafx6Sz9bhYnHxCW_QU_SdN_wGELZT_</recordid><startdate>20090205</startdate><enddate>20090205</enddate><creator>Hankare, P.P.</creator><creator>Khomane, A.S.</creator><creator>Chate, P.A.</creator><creator>Rathod, K.C.</creator><creator>Garadkar, K.M.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20090205</creationdate><title>Preparation of copper selenide thin films by simple chemical route at low temperature and their characterization</title><author>Hankare, P.P. ; Khomane, A.S. ; Chate, P.A. ; Rathod, K.C. ; Garadkar, K.M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c370t-6dffc947ff0f4155371deb175455cc0315d3fc4878689410aa951da82093a5a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Chemical synthesis</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electrical properties of specific thin films</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Exact sciences and technology</topic><topic>Grain boundaries</topic><topic>Ii-vi semiconductors</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of specific thin films</topic><topic>Other semiconductors</topic><topic>Physics</topic><topic>Semiconductor</topic><topic>Thin films</topic><topic>X-ray diffraction</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hankare, P.P.</creatorcontrib><creatorcontrib>Khomane, A.S.</creatorcontrib><creatorcontrib>Chate, P.A.</creatorcontrib><creatorcontrib>Rathod, K.C.</creatorcontrib><creatorcontrib>Garadkar, K.M.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of alloys and compounds</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hankare, P.P.</au><au>Khomane, A.S.</au><au>Chate, P.A.</au><au>Rathod, K.C.</au><au>Garadkar, K.M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Preparation of copper selenide thin films by simple chemical route at low temperature and their characterization</atitle><jtitle>Journal of alloys and compounds</jtitle><date>2009-02-05</date><risdate>2009</risdate><volume>469</volume><issue>1</issue><spage>478</spage><epage>482</epage><pages>478-482</pages><issn>0925-8388</issn><eissn>1873-4669</eissn><abstract>Copper selenide thin films have been deposited using a precursor solution containing copper sulphate (0.25
M) ammonia 25% and sodium selenosulphate (0.25
M) in aqueous alkaline medium at 5
°C. The as-grown films were found to be well adherent to glass substrates and dark red in color. The films were characterized by X-ray diffraction, scanning electron microscopy, optical absorption, electrical conductivity, and thermo-electric techniques. The analysis of optical absorption data shows energy band gap energy (
E
g) to be 2.15
eV. The electrical conductivity of copper selenide thin film was found to be of the order of 10
−3 (Ωcm)
−1. Thermo-electric power measurement shows p-type conduction mechanism.</abstract><cop>Kidlington</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jallcom.2008.02.062</doi><tpages>5</tpages></addata></record> |
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| ispartof | Journal of alloys and compounds, 2009-02, Vol.469 (1), p.478-482 |
| issn | 0925-8388 1873-4669 |
| language | eng |
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| subjects | Chemical synthesis Condensed matter: electronic structure, electrical, magnetic, and optical properties Electrical properties of specific thin films Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Grain boundaries Ii-vi semiconductors Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Other semiconductors Physics Semiconductor Thin films X-ray diffraction |
| title | Preparation of copper selenide thin films by simple chemical route at low temperature and their characterization |
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