Preparation of copper selenide thin films by simple chemical route at low temperature and their characterization

Copper selenide thin films have been deposited using a precursor solution containing copper sulphate (0.25 M) ammonia 25% and sodium selenosulphate (0.25 M) in aqueous alkaline medium at 5 °C. The as-grown films were found to be well adherent to glass substrates and dark red in color. The films were characterized by X-ray diffraction, scanning electron microscopy, optical absorption, electrical conductivity, and thermo-electric techniques. The analysis of optical absorption data shows energy band gap energy ( E g) to be 2.15 eV. The electrical conductivity of copper selenide thin film was found to be of the order of 10 −3 (Ωcm) −1. Thermo-electric power measurement shows p-type conduction mechanism.