New results on HVPE growth of AlN, GaN, InN and their alloys

A variety of new results on HVPE growth of group III nitride layers and heterostructures are described. Crack free from 10 to 30 μm thick AlN layers were grown on 100‐mm SiC substrates. Bowing of the AlN/SiC wafers was controlled below 10 microns. Low growth rate HVPE with deposition rate below 10 nm/min was demonstrated for GaN, AlN, and AlGaN. This process resulted in the first HVPE grown multi‐quantum wells (MQWs) and superlattices. P‐type as‐grown GaN layers with acceptor concentrations up to 3×1019 cm–3 were demonstrated. InGaN layers from 0.002 to 2 μm thick were grown by HVPE for the whole composition range using c‐plane GaN/sapphire template substrates. Non‐polar InGaN layers were grown on a‐GaN/r‐sapphire templates and m‐plane GaN bulk substrates. Blue and green all‐HVPE LEDs were made utilizing InGaN MQWs grown on p‐GaN/sapphire templates. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)