m -plane GaN/InGaN/AlInN on LiAlO2 grown by MOVPE

m -plane GaN/InGaN/AlInN on LiAlO2 grown by MOVPE

We present a study of growth and properties of m ‐plane GaN/InGaN/AlInN structures on LiAlO2 substrates grown by metal organic vapour phase epitaxy (MOVPE). A buffer structure, including an m ‐plane AlInN interlayer prior to GaN growth, has been developed. Quantum well structures on top of this buff...

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Veröffentlicht in:Physica Status Solidi (b) 2008-05, Vol.245 (5), p.893-895
Hauptverfasser: Behmenburg, H., Wen, T. C., Dikme, Y., Mauder, C., Khoshroo, L. Rahimzadeh, Chou, M. M. C., Rzheutskii, M. V., Lutsenko, E. V., Yablonskii, G. P., Woitok, J., Kalisch, H., Jansen, R. H., Heuken, M.
Format: Artikel
Sprache:eng
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78.55.Cr
78.66.Fd
78.67.De
81.05.Ea
81.07.St
81.15.Kk
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Zusammenfassung:We present a study of growth and properties of m ‐plane GaN/InGaN/AlInN structures on LiAlO2 substrates grown by metal organic vapour phase epitaxy (MOVPE). A buffer structure, including an m ‐plane AlInN interlayer prior to GaN growth, has been developed. Quantum well structures on top of this buffer showed absence of polarization‐induced electric fields verified by room temperature photoluminescence (RT PL) measurements with different excitation intensities. Different samples with peak emission wavelength between 433 nm and 495 nm exhibited stable peak position even for high excitation intensities of 500 kW/cm2. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:0370-1972
1521-3951
DOI:10.1002/pssb.200778565