Effect of Annealing Temperature on Titanium Dioxide Thin Films Prepared by Sol Gel Method

Nanocrystalline anatase and amorphous Titanium Dioxide (TiO2) thin film have been prepared using sol-gel method and deposited by spin coater technique. The influence of annealing temperature on the structural, surface morphology and electrical properties of the thin film is characterized by Scanning Electron Microscopy (SEM) and I-V measurement. The result indicates that nanocrystalline anatase phase can be obtained at annealing temperature of 300 deg C or above. Titanium dioxide thin films were deposited on silicon substrates. Annealing temperature at T = As deposited, 100 deg C, 300 deg C and 500 deg C have been observed. As deposited substrates is also observed. The result indicated electrical properties of titanium dioxide thin films were changed with annealing temperatures. As the annealing temperature rises, the resistivity will be decreased. The SEM investigation showed that grain size of titanium oxide increased with higher annealing temperature. Furthermore, the SEM result indicated lattice matching between titanium dioxide and substrate is important to produce good quality titanium dioxide thin film after annealing process. The results suggest that surface porosity, electrical properties and surface morphology of titanium dioxide could be affected by changing annealing temperatures for electronic devices application.