Effect of Mn2+ spin frustrations on spin dynamics of charge carriers in (BEDT-TTF)2Mn[N(CN)2]3 crystals

The effect of spin frustrations of Mn2+ planar lattice on the spin relaxation rate in conductive BEDT‐TTF layers was observed. Layer‐to‐layer exchange availability was proved. Critical field of spin flop transition Hc = 32 kOe measured in our experiments makes it possible to estimate the interplanar...

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Veröffentlicht in:Physica Status Solidi (b) 2008-06, Vol.245 (6), p.1165-1169
Hauptverfasser: Morgunov, Roman, Kurganova, Evgenia, Mushenok, Fedor
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Sprache:eng
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Zusammenfassung:The effect of spin frustrations of Mn2+ planar lattice on the spin relaxation rate in conductive BEDT‐TTF layers was observed. Layer‐to‐layer exchange availability was proved. Critical field of spin flop transition Hc = 32 kOe measured in our experiments makes it possible to estimate the interplanar exchange interaction as ∼10–3 K. Indirect interplanar exchange occurs through BEDT‐TTF layers due to spin polarization of conducting band electrons contributing to the exchange interaction. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:0370-1972
1521-3951
DOI:10.1002/pssb.200743420