Silicon Carbide Terahertz Emitting Devices

In recent years, terahertz (THz) sources between 0.1 THz and 10 THz have attracted much attention for imaging and sensing applications. THz emission from radiative transitions in impurity states has been demonstrated in Si and Ge devices by either electrical or optical pumping. Compared to Si as the...

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Veröffentlicht in:	Journal of electronic materials 2008-05, Vol.37 (5), p.726-729
Hauptverfasser:	Xuan, G., Lv, P.-C., Zhang, X., Kolodzey, J., DeSalvo, G., Powell, A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Characterization and Evaluation of Materials Chemistry and Materials Science Conductivity Electroluminescence Electromagnetism Electronics and Microelectronics Instrumentation Materials Science Optical and Electronic Materials Silicon carbide Solid State Physics
Online-Zugang:	Volltext
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