Silicon Carbide Terahertz Emitting Devices

In recent years, terahertz (THz) sources between 0.1 THz and 10 THz have attracted much attention for imaging and sensing applications. THz emission from radiative transitions in impurity states has been demonstrated in Si and Ge devices by either electrical or optical pumping. Compared to Si as the material for THz emission, the wide-band-gap material SiC exhibits several advantages such as a higher dopant ionization energy, which allows a higher device operating temperature. Combining with its superior material qualities such as high breakdown field and high thermal conductivity, SiC is a promising material for high-temperature and high-power THz emitting devices. This article describes recent progress in using SiC materials to increase the operating temperature and output power of dopant-based THz sources.