Baric and temperature dependences of kinetic coefficients in p-Cd0.7Mn0.3GeAs2 at atmospheric and high pressures

The pressure dependences of the resistivity ρ (P) and Hall coefficient Rρ(P) have been measured for heavily doped Cd0.7Mn0.3GeAs2 at increasing and decreasing pressure at room temperature. To investigate temperature properties of conductivity in Cd0.7Mn0.3GeAs2, the temperature dependences ρ (T) and...

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Veröffentlicht in:Physica Status Solidi (b) 2009-03, Vol.246 (3), p.655-657
Hauptverfasser: Mollaev, A. Yu, Kamilov, I. K., Arslanov, R. K., Zalibekov, U. Z., Arslanov, T. R., Bashirov, R. R., Novotorzev, V. M., Marenkin, S. F.
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Sprache:eng
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Zusammenfassung:The pressure dependences of the resistivity ρ (P) and Hall coefficient Rρ(P) have been measured for heavily doped Cd0.7Mn0.3GeAs2 at increasing and decreasing pressure at room temperature. To investigate temperature properties of conductivity in Cd0.7Mn0.3GeAs2, the temperature dependences ρ (T) and Rρ(T) have been defined in the temperature range 77–450 K at atmospheric pressure. The pioneering measurements of magnetoresistance Δρxx (H, P)/ρ0(P) in Cd0.7Mn0.3GeAs2 are presented. A hysteresis of magnetoresistive effect has been found when pressure rises and falls. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:0370-1972
1521-3951
DOI:10.1002/pssb.200880514