Baric and temperature dependences of kinetic coefficients in p-Cd0.7Mn0.3GeAs2 at atmospheric and high pressures
The pressure dependences of the resistivity ρ (P) and Hall coefficient Rρ(P) have been measured for heavily doped Cd0.7Mn0.3GeAs2 at increasing and decreasing pressure at room temperature. To investigate temperature properties of conductivity in Cd0.7Mn0.3GeAs2, the temperature dependences ρ (T) and...
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Veröffentlicht in: | Physica Status Solidi (b) 2009-03, Vol.246 (3), p.655-657 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The pressure dependences of the resistivity ρ (P) and Hall coefficient Rρ(P) have been measured for heavily doped Cd0.7Mn0.3GeAs2 at increasing and decreasing pressure at room temperature. To investigate temperature properties of conductivity in Cd0.7Mn0.3GeAs2, the temperature dependences ρ (T) and Rρ(T) have been defined in the temperature range 77–450 K at atmospheric pressure. The pioneering measurements of magnetoresistance Δρxx (H, P)/ρ0(P) in Cd0.7Mn0.3GeAs2 are presented. A hysteresis of magnetoresistive effect has been found when pressure rises and falls. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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ISSN: | 0370-1972 1521-3951 |
DOI: | 10.1002/pssb.200880514 |