Ionization of xenon Rydberg atoms at oxidized Si(1 0 0) surfaces

The ionization of xenon Rydberg atoms excited to the lowest states in the n = 20 Stark manifold at Si(1 0 0) surfaces possessing a robust (∼10 Å) native oxide layer is investigated. The data show that a sizeable fraction of the incident atoms are ionized relatively far from the surface through enhan...

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Veröffentlicht in:	Surface science 2008-04, Vol.602 (7), p.1306-1312
Hauptverfasser:	Neufeld, D.D., Dunham, H.R., Wethekam, S., Lancaster, J.C., Dunning, F.B.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Field ionization Insulating surfaces Ion–solid interactions Physics Semiconducting surfaces Silicon Silicon oxides Single crystal surfaces Surface electronic phenomena
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