Ionization of xenon Rydberg atoms at oxidized Si(1 0 0) surfaces

The ionization of xenon Rydberg atoms excited to the lowest states in the n = 20 Stark manifold at Si(1 0 0) surfaces possessing a robust (∼10 Å) native oxide layer is investigated. The data show that a sizeable fraction of the incident atoms are ionized relatively far from the surface through enhan...

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Veröffentlicht in:	Surface science 2008-04, Vol.602 (7), p.1306-1312
Hauptverfasser:	Neufeld, D.D., Dunham, H.R., Wethekam, S., Lancaster, J.C., Dunning, F.B.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Field ionization Insulating surfaces Ion–solid interactions Physics Semiconducting surfaces Silicon Silicon oxides Single crystal surfaces Surface electronic phenomena
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Beschreibung
Zusammenfassung:	The ionization of xenon Rydberg atoms excited to the lowest states in the n = 20 Stark manifold at Si(1 0 0) surfaces possessing a robust (∼10 Å) native oxide layer is investigated. The data show that a sizeable fraction of the incident atoms are ionized relatively far from the surface through enhanced tunneling due to the presence of localized stray fields at the surface associated with surface charging or with surface inhomogeneities. A simple model is presented to justify this assertion.
ISSN:	0039-6028 1879-2758
DOI:	10.1016/j.susc.2007.12.042