On-state behaviour of diamond Schottky diodes
Synthetic diamond power Schottky structures have the capability of sustaining significant reverse voltages with rather thin drift layers. Diamond Schottky barrier diodes (SBDs) also exhibit promising on-state behaviour. This paper looks at the influence of temperature and drift doping on the forward...
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| Veröffentlicht in: | Diamond and related materials 2008-04, Vol.17 (4), p.736-740 |
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| container_title | Diamond and related materials |
| container_volume | 17 |
| creator | Brezeanu, M. Butler, T. Amaratunga, G.A.J. Udrea, F. Rupesinghe, N. Rashid, S. |
| description | Synthetic diamond power Schottky structures have the capability of sustaining significant reverse voltages with rather thin drift layers. Diamond Schottky barrier diodes (SBDs) also exhibit promising on-state behaviour. This paper looks at the influence of temperature and drift doping on the forward characteristics of these devices. Physical explanations for the variation of the forward current with the forward voltage, together with equations which aim to model this dependence, are also presented. |
| doi_str_mv | 10.1016/j.diamond.2007.08.040 |
| format | Article |
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Diamond Schottky barrier diodes (SBDs) also exhibit promising on-state behaviour. This paper looks at the influence of temperature and drift doping on the forward characteristics of these devices. Physical explanations for the variation of the forward current with the forward voltage, together with equations which aim to model this dependence, are also presented.</description><identifier>ISSN: 0925-9635</identifier><identifier>EISSN: 1879-0062</identifier><identifier>DOI: 10.1016/j.diamond.2007.08.040</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Applied sciences ; Cross-disciplinary physics: materials science; rheology ; Device modelling ; Diodes ; Electronics ; Exact sciences and technology ; Fullerenes and related materials; diamonds, graphite ; High power electronics ; Materials science ; Physics ; Schottky diodes ; Semiconductor electronics. Microelectronics. Optoelectronics. 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Diamond Schottky barrier diodes (SBDs) also exhibit promising on-state behaviour. This paper looks at the influence of temperature and drift doping on the forward characteristics of these devices. Physical explanations for the variation of the forward current with the forward voltage, together with equations which aim to model this dependence, are also presented.</description><subject>Applied sciences</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Device modelling</subject><subject>Diodes</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Fullerenes and related materials; diamonds, graphite</subject><subject>High power electronics</subject><subject>Materials science</subject><subject>Physics</subject><subject>Schottky diodes</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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| fulltext | fulltext |
| identifier | ISSN: 0925-9635 |
| ispartof | Diamond and related materials, 2008-04, Vol.17 (4), p.736-740 |
| issn | 0925-9635 1879-0062 |
| language | eng |
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| source | Elsevier ScienceDirect Journals |
| subjects | Applied sciences Cross-disciplinary physics: materials science rheology Device modelling Diodes Electronics Exact sciences and technology Fullerenes and related materials diamonds, graphite High power electronics Materials science Physics Schottky diodes Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Specific materials Synthetic diamond |
| title | On-state behaviour of diamond Schottky diodes |
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