On-state behaviour of diamond Schottky diodes

Synthetic diamond power Schottky structures have the capability of sustaining significant reverse voltages with rather thin drift layers. Diamond Schottky barrier diodes (SBDs) also exhibit promising on-state behaviour. This paper looks at the influence of temperature and drift doping on the forward...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Diamond and related materials 2008-04, Vol.17 (4), p.736-740
Hauptverfasser:	Brezeanu, M., Butler, T., Amaratunga, G.A.J., Udrea, F., Rupesinghe, N., Rashid, S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Cross-disciplinary physics: materials science rheology Device modelling Diodes Electronics Exact sciences and technology Fullerenes and related materials diamonds, graphite High power electronics Materials science Physics Schottky diodes Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Specific materials Synthetic diamond
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Synthetic diamond power Schottky structures have the capability of sustaining significant reverse voltages with rather thin drift layers. Diamond Schottky barrier diodes (SBDs) also exhibit promising on-state behaviour. This paper looks at the influence of temperature and drift doping on the forward characteristics of these devices. Physical explanations for the variation of the forward current with the forward voltage, together with equations which aim to model this dependence, are also presented.
ISSN:	0925-9635 1879-0062
DOI:	10.1016/j.diamond.2007.08.040