In situ observation of composition profiles in the solution by X-ray penetration method
The X-ray penetration intensity during the diffusion process of NH 4Br into H 2O was measured by a CdTe line sensor as a function of time and it was converted to the NH 4Br composition using a calibration line. The diffusion coefficient of NH 4Br into H 2O was estimated to be 2.2×10 −5 cm 2/s by com...
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| Veröffentlicht in: | Journal of crystal growth 2008-04, Vol.310 (7), p.1487-1492 |
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| creator | Hayakawa, Yasuhiro Hikida, Takuya Morii, Hisashi Konno, Akiko Chen, Chung-Hao Arafune, Kouji Kawai, Hideki Koyama, Tadanobu Momose, Yoshimi Ozawa, Tetsuo Aoki, Toru |
| description | The X-ray penetration intensity during the diffusion process of NH
4Br into H
2O was measured by a CdTe line sensor as a function of time and it was converted to the NH
4Br composition using a calibration line. The diffusion coefficient of NH
4Br into H
2O was estimated to be 2.2×10
−5
cm
2/s by comparing the calculated results. The method was applied to the growth of InGaSb from the In–Ga–Sb solution. The indium composition profiles in the solution were measured and growth of InGaSb from the In–Ga–Sb solution was observed from the change of X-ray intensity. The growth region of InGaSb crystal was confirmed by the electron probe microanalysis. It was demonstrated that the X-ray penetration method was a powerful method to measure the composition profiles in the solution. |
| doi_str_mv | 10.1016/j.jcrysgro.2007.12.010 |
| format | Article |
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4Br into H
2O was measured by a CdTe line sensor as a function of time and it was converted to the NH
4Br composition using a calibration line. The diffusion coefficient of NH
4Br into H
2O was estimated to be 2.2×10
−5
cm
2/s by comparing the calculated results. The method was applied to the growth of InGaSb from the In–Ga–Sb solution. The indium composition profiles in the solution were measured and growth of InGaSb from the In–Ga–Sb solution was observed from the change of X-ray intensity. The growth region of InGaSb crystal was confirmed by the electron probe microanalysis. It was demonstrated that the X-ray penetration method was a powerful method to measure the composition profiles in the solution.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2007.12.010</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. Mass transfer ; A2. Growth from solutions ; B1. Gallium compounds ; B2. Semiconducting III–V materials ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Equations of state, phase equilibria, and phase transitions ; Exact sciences and technology ; Growth from solutions ; Materials science ; Methods of crystal growth; physics of crystal growth ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Other interactions of matter with particles and radiation ; Physics ; Solubility, segregation, and mixing; phase separation ; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation ; X-ray scattering</subject><ispartof>Journal of crystal growth, 2008-04, Vol.310 (7), p.1487-1492</ispartof><rights>2007 Elsevier B.V.</rights><rights>2008 INIST-CNRS</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c531t-5219bc437cbab3b36a46892af4a63226fb1f8d9fbbdc91b4e54811bce166cc773</citedby><cites>FETCH-LOGICAL-c531t-5219bc437cbab3b36a46892af4a63226fb1f8d9fbbdc91b4e54811bce166cc773</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0022024807012110$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=20268389$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Hayakawa, Yasuhiro</creatorcontrib><creatorcontrib>Hikida, Takuya</creatorcontrib><creatorcontrib>Morii, Hisashi</creatorcontrib><creatorcontrib>Konno, Akiko</creatorcontrib><creatorcontrib>Chen, Chung-Hao</creatorcontrib><creatorcontrib>Arafune, Kouji</creatorcontrib><creatorcontrib>Kawai, Hideki</creatorcontrib><creatorcontrib>Koyama, Tadanobu</creatorcontrib><creatorcontrib>Momose, Yoshimi</creatorcontrib><creatorcontrib>Ozawa, Tetsuo</creatorcontrib><creatorcontrib>Aoki, Toru</creatorcontrib><title>In situ observation of composition profiles in the solution by X-ray penetration method</title><title>Journal of crystal growth</title><description>The X-ray penetration intensity during the diffusion process of NH
4Br into H
2O was measured by a CdTe line sensor as a function of time and it was converted to the NH
4Br composition using a calibration line. The diffusion coefficient of NH
4Br into H
2O was estimated to be 2.2×10
−5
cm
2/s by comparing the calculated results. The method was applied to the growth of InGaSb from the In–Ga–Sb solution. The indium composition profiles in the solution were measured and growth of InGaSb from the In–Ga–Sb solution was observed from the change of X-ray intensity. The growth region of InGaSb crystal was confirmed by the electron probe microanalysis. It was demonstrated that the X-ray penetration method was a powerful method to measure the composition profiles in the solution.</description><subject>A1. Mass transfer</subject><subject>A2. Growth from solutions</subject><subject>B1. Gallium compounds</subject><subject>B2. Semiconducting III–V materials</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Equations of state, phase equilibria, and phase transitions</subject><subject>Exact sciences and technology</subject><subject>Growth from solutions</subject><subject>Materials science</subject><subject>Methods of crystal growth; physics of crystal growth</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Other interactions of matter with particles and radiation</subject><subject>Physics</subject><subject>Solubility, segregation, and mixing; phase separation</subject><subject>Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</subject><subject>X-ray scattering</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNqFUMtOwzAQtBBIlMIvIF_gluBH6iQ3UMWjUiUuILhZtrOmjtI42ClS_x6XFq5cdrWamZ3dQeiSkpwSKm7avDVhGz-CzxkhZU5ZTig5QhNalTybEcKO0SRVlhFWVKfoLMaWkKSkZILeFj2ObtxgryOELzU632NvsfHrwSdgNw7BW9dBxK7H4wpw9N3mB9Bb_J4FtcUD9DCGvXgN48o35-jEqi7CxaFP0evD_cv8KVs-Py7md8vMzDgdsxmjtTYFL41WmmsuVCGqmilbKMEZE1ZTWzW11boxNdUFzIqKUm2ACmFMWfIput7vTUd-biCOcu2iga5TPfhNlJwTURecJ6LYE03wMQawcghurcJWUiJ3OcpW_uYodzlKymTKMQmvDg4qGtXZoHrj4p-aESYqXtWJd7vnQXr3y0GQ0TjoDTQugBll491_Vt9Tno5B</recordid><startdate>20080401</startdate><enddate>20080401</enddate><creator>Hayakawa, Yasuhiro</creator><creator>Hikida, Takuya</creator><creator>Morii, Hisashi</creator><creator>Konno, Akiko</creator><creator>Chen, Chung-Hao</creator><creator>Arafune, Kouji</creator><creator>Kawai, Hideki</creator><creator>Koyama, Tadanobu</creator><creator>Momose, Yoshimi</creator><creator>Ozawa, Tetsuo</creator><creator>Aoki, Toru</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20080401</creationdate><title>In situ observation of composition profiles in the solution by X-ray penetration method</title><author>Hayakawa, Yasuhiro ; Hikida, Takuya ; Morii, Hisashi ; Konno, Akiko ; Chen, Chung-Hao ; Arafune, Kouji ; Kawai, Hideki ; Koyama, Tadanobu ; Momose, Yoshimi ; Ozawa, Tetsuo ; Aoki, Toru</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c531t-5219bc437cbab3b36a46892af4a63226fb1f8d9fbbdc91b4e54811bce166cc773</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>A1. Mass transfer</topic><topic>A2. Growth from solutions</topic><topic>B1. Gallium compounds</topic><topic>B2. Semiconducting III–V materials</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Equations of state, phase equilibria, and phase transitions</topic><topic>Exact sciences and technology</topic><topic>Growth from solutions</topic><topic>Materials science</topic><topic>Methods of crystal growth; physics of crystal growth</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Other interactions of matter with particles and radiation</topic><topic>Physics</topic><topic>Solubility, segregation, and mixing; phase separation</topic><topic>Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</topic><topic>X-ray scattering</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hayakawa, Yasuhiro</creatorcontrib><creatorcontrib>Hikida, Takuya</creatorcontrib><creatorcontrib>Morii, Hisashi</creatorcontrib><creatorcontrib>Konno, Akiko</creatorcontrib><creatorcontrib>Chen, Chung-Hao</creatorcontrib><creatorcontrib>Arafune, Kouji</creatorcontrib><creatorcontrib>Kawai, Hideki</creatorcontrib><creatorcontrib>Koyama, Tadanobu</creatorcontrib><creatorcontrib>Momose, Yoshimi</creatorcontrib><creatorcontrib>Ozawa, Tetsuo</creatorcontrib><creatorcontrib>Aoki, Toru</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hayakawa, Yasuhiro</au><au>Hikida, Takuya</au><au>Morii, Hisashi</au><au>Konno, Akiko</au><au>Chen, Chung-Hao</au><au>Arafune, Kouji</au><au>Kawai, Hideki</au><au>Koyama, Tadanobu</au><au>Momose, Yoshimi</au><au>Ozawa, Tetsuo</au><au>Aoki, Toru</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>In situ observation of composition profiles in the solution by X-ray penetration method</atitle><jtitle>Journal of crystal growth</jtitle><date>2008-04-01</date><risdate>2008</risdate><volume>310</volume><issue>7</issue><spage>1487</spage><epage>1492</epage><pages>1487-1492</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>The X-ray penetration intensity during the diffusion process of NH
4Br into H
2O was measured by a CdTe line sensor as a function of time and it was converted to the NH
4Br composition using a calibration line. The diffusion coefficient of NH
4Br into H
2O was estimated to be 2.2×10
−5
cm
2/s by comparing the calculated results. The method was applied to the growth of InGaSb from the In–Ga–Sb solution. The indium composition profiles in the solution were measured and growth of InGaSb from the In–Ga–Sb solution was observed from the change of X-ray intensity. The growth region of InGaSb crystal was confirmed by the electron probe microanalysis. It was demonstrated that the X-ray penetration method was a powerful method to measure the composition profiles in the solution.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2007.12.010</doi><tpages>6</tpages><oa>free_for_read</oa></addata></record> |
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| subjects | A1. Mass transfer A2. Growth from solutions B1. Gallium compounds B2. Semiconducting III–V materials Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Equations of state, phase equilibria, and phase transitions Exact sciences and technology Growth from solutions Materials science Methods of crystal growth physics of crystal growth Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Other interactions of matter with particles and radiation Physics Solubility, segregation, and mixing phase separation Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation X-ray scattering |
| title | In situ observation of composition profiles in the solution by X-ray penetration method |
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