In situ observation of composition profiles in the solution by X-ray penetration method

The X-ray penetration intensity during the diffusion process of NH 4Br into H 2O was measured by a CdTe line sensor as a function of time and it was converted to the NH 4Br composition using a calibration line. The diffusion coefficient of NH 4Br into H 2O was estimated to be 2.2×10 −5 cm 2/s by comparing the calculated results. The method was applied to the growth of InGaSb from the In–Ga–Sb solution. The indium composition profiles in the solution were measured and growth of InGaSb from the In–Ga–Sb solution was observed from the change of X-ray intensity. The growth region of InGaSb crystal was confirmed by the electron probe microanalysis. It was demonstrated that the X-ray penetration method was a powerful method to measure the composition profiles in the solution.