Improved electron injection into Alq3 based devices using a thin Erq3 injection layer
The role of a thin erbium(III) tris(8-hydroxyquinoline) (Erq3) interface layer on the electron injection into aluminium(III) tris(8-hydroxyquinoline) (Alq3) based organic light emitting devices (OLEDs) has been investigated. It has been shown that the use of a 40 A interface layer can increase the e...
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Veröffentlicht in: | Journal of physics. D, Applied physics Applied physics, 2008-04, Vol.41 (8), p.085108-085108 (5) |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The role of a thin erbium(III) tris(8-hydroxyquinoline) (Erq3) interface layer on the electron injection into aluminium(III) tris(8-hydroxyquinoline) (Alq3) based organic light emitting devices (OLEDs) has been investigated. It has been shown that the use of a 40 A interface layer can increase the efficiency of a simple Alq3 OLED with an Al cathode to a level comparable with other, well established, high-efficiency cathodes such as LiF/Al. We also show that, despite the bulk HOMO and LUMO positions for Erq3 being little different from those for Alq3, the presence of an interfacial layer makes the devices turn-on voltage almost independent of the cathode metal. This is explained by there being a vacuum level shift for Erq3 which is dependent on the work function of the cathode metal. |
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ISSN: | 0022-3727 1361-6463 |
DOI: | 10.1088/0022-3727/41/8/085108 |