Low temperature growth of carbon nanotubes on Si substrates in high vacuum

Carbon nanotube (CNT) growth was carried out on SiO 2/Si substrates using an alcohol gas source in a high vacuum without any carbon decomposition processes. In the Raman spectra of the grown CNTs, both the G/Si peak intensity ratio and G/D peak intensity ratio indicated that the optimum growth temperature became lower as the pressure decreased. By reducing the pressure to 1 × 10 − 4 Pa, CNTs could be grown at 400 °C, and the G/D ratio was about 16, indicating that the quality of the grown CNTs was good, taking into account the low growth pressure. In addition, the Raman spectra in the radial breathing mode (RBM) region showed that the diameter distribution of the grown CNTs was dependent on both the growth pressure and temperature, and the relative intensity of the RBM peaks from small-diameter CNTs increased as the growth pressure and/or temperature was reduced.