High-efficiency AlGaN-based UV light-emitting diode on laterally overgrown AlN

Ultraviolet light-emitting diodes (UV-LEDs) with a peak wavelength of 335 nm were fabricated on AlN/sapphire templates. As templates for the fabrication of UV-LEDs, planar AlN and epitaxial laterally overgrown (ELO) AlN on sapphire (0 0 0 1) substrates were compared. The output power of UV-LEDs grow...

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Veröffentlicht in:	Journal of crystal growth 2008-04, Vol.310 (7), p.2326-2329
Hauptverfasser:	Nagamatsu, Kentaro, Okada, Narihito, Sugimura, Hiroki, Tsuzuki, Hirotoshi, Mori, Fumiaki, Iida, Kazuyoshi, Bando, Akira, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Format:	Artikel
Sprache:	eng
Schlagworte:	A3. Metal-organic vapor phase epitaxy Applied sciences B1. Nitrides B3. Light-emitting diodes Cross-disciplinary physics: materials science rheology Electronics Exact sciences and technology Materials Materials science Methods of deposition of films and coatings film growth and epitaxy Microelectronic fabrication (materials and surfaces technology) Optoelectronic devices Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Vapor phase epitaxy growth from vapor phase
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Zusammenfassung:	Ultraviolet light-emitting diodes (UV-LEDs) with a peak wavelength of 335 nm were fabricated on AlN/sapphire templates. As templates for the fabrication of UV-LEDs, planar AlN and epitaxial laterally overgrown (ELO) AlN on sapphire (0 0 0 1) substrates were compared. The output power of UV-LEDs grown on ELO-AlN was 27 times higher than that of UV-LEDs on the planar AlN template.
ISSN:	0022-0248 1873-5002
DOI:	10.1016/j.jcrysgro.2007.11.152