Growth and characterization of GaSb heteroepitaxial layers on Si(111) substrates

We investigated the growth of GaSb layers and GaSb/‐AlGaSb multiple quantum well (MQW) structures using an AlSb initiation layer on Si(111) substrates. The entire growth was monitored using reflection high‐energy electron diffraction (RHEED). The GaSb epitaxial films and MQWstructures were characterized by X‐ray diffraction (HRXRD), atomic force microscopy (AFM) and photoluminescence (PL) spectroscopy. Our results suggest that high‐quality (111)‐oriented GaSb films with a mirror surface can be obtained using the present growth condition. The PL peak energy of the MQWs on Si(111) substrates is almost temperature independent up to ∼120 K and exhibits relatively smaller variation with temperature compared to that of the MQWs grown on Si(001) substrates. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)