Characterization of thermal, optical and carrier transport properties of porous silicon using the photoacoustic technique
In this work, the porous silicon layer was prepared by the electrochemical anodization etching process on n-type and p-type silicon wafers. The formation of the porous layer has been identified by photoluminescence and SEM measurements. The optical absorption, energy gap, carrier transport and therm...
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Veröffentlicht in: | Physica. B, Condensed matter Condensed matter, 2008-08, Vol.403 (17), p.2634-2638 |
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Sprache: | eng |
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