3D unsteady analysis of melt flow and segregation during EFG Si crystal growth

Ga transport in the melt during EFG Si crystal growth has been simulated within a 3D unsteady approach. The computations reveal reasons of effective redistribution of the impurity in the crystallization system. The computational results are compared with experimental data obtained in a new type of E...

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Veröffentlicht in:	Journal of crystal growth 2008-04, Vol.310 (7), p.2209-2214
Hauptverfasser:	Smirnova, O.V., Kalaev, V.V., Seidl, A., Birkmann, B.
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Computer simulation A1. Mass transfer A2. Edge-defined film-fed growth B1. Si Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Equations of state, phase equilibria, and phase transitions Exact sciences and technology Growth from melts zone melting and refining Materials science Methods of crystal growth physics of crystal growth Physics Solid-solid transitions Solubility, segregation, and mixing phase separation Specific phase transitions Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation
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Zusammenfassung:	Ga transport in the melt during EFG Si crystal growth has been simulated within a 3D unsteady approach. The computations reveal reasons of effective redistribution of the impurity in the crystallization system. The computational results are compared with experimental data obtained in a new type of EFG furnace, designed for the growth of dodecagonally shaped silicon tubes of about 0.5 m diameter. To study the effect of 3D unsteady melt motion, the results are compared with 2D axisymmetric computations of Ga transport.
ISSN:	0022-0248 1873-5002
DOI:	10.1016/j.jcrysgro.2007.10.071