Write Current Reduction in Transition Metal Oxide Based Resistance Change Memory

A novel memory cell structure with a Pt/Ti‐doped NiO/Pt architecture is shown to exhibit the lowest write current reported thus far for a unipolar switching resistance‐change‐based device, as shown in the figure. The write current decreases dramatically upon scaling to cell sizes smaller than 100 nm×100 nm. High‐density universal memory can be fabricated by combining this node element with a selective switch.