The semiconductor to metal transition in FeSi1-xGex probed by high resolution X-ray absorption spectroscopy

The semiconductor to metal transition in FeSi1-xGex probed by high resolution X-ray absorption spectroscopy

The substituted system FeSi1-xGex undergoes a semiconductor to metal transition at x0.25. We investigated the electronic structure for the x=,0.19 and 0.44 compounds using X-ray absorption spectroscopy in the partial fluorescence yield mode (PFY-XAS) at the Fe K-edge. The position of the edge showed...

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Veröffentlicht in:Physica. B, Condensed matter Condensed matter, 2008-04, Vol.403 (5-9), p.922-924
Hauptverfasser: Tsujii, N, Yamaoka, H, Oohashi, H, Jarrige, I, Nomoto, D, Takahiro, K, Ozaki, K, Kawatsura, K
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Sprache:eng
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Zusammenfassung:The substituted system FeSi1-xGex undergoes a semiconductor to metal transition at x0.25. We investigated the electronic structure for the x=,0.19 and 0.44 compounds using X-ray absorption spectroscopy in the partial fluorescence yield mode (PFY-XAS) at the Fe K-edge. The position of the edge showed no x or temperature dependence, and agreed with that of metal Fe. These results are consistent with the band calculations.
ISSN:0921-4526
DOI:10.1016/j.physb.2007.10.060