Surface-Plasmon-Enhanced Light-Emitting Diodes

A surface‐plasmon‐enhanced InGaN/GaN multiple quantum well blue LED with an embedded Ag nanoparticle layer inserted between the n‐GaN layer and the MQW layer is presented. Time‐resolved photoluminescence experiments revealed that the spontaneous emission rate was increased significantly by energy tr...

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Veröffentlicht in:Advanced materials (Weinheim) 2008-04, Vol.20 (7), p.1253-1257
Hauptverfasser: Kwon, Min-Ki, Kim, Ja-Yeon, Kim, Baek-Hyun, Park, Il-Kyu, Cho, Chu-Young, Byeon, Clare Chisu, Park, Seong-Ju
Format: Artikel
Sprache:eng
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Zusammenfassung:A surface‐plasmon‐enhanced InGaN/GaN multiple quantum well blue LED with an embedded Ag nanoparticle layer inserted between the n‐GaN layer and the MQW layer is presented. Time‐resolved photoluminescence experiments revealed that the spontaneous emission rate was increased significantly by energy transfer between the quantum well light emitter and the surface plasmons from the Ag nanoparticles. A 32.2% increase in optical output power of the LED is observed.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.200701130