Epitaxial growth of CdSexTe1-x thin films on Si(1 00) by molecular beam epitaxy using lattice mismatch graded structures

CdSeTe epilayers were grown by molecular beam epitaxy on (100)-oriented vicinal silicon wafers. By controlling the growth conditions, either multiple-phase or single-phase epilayers could be deposited. In this paper we present a detailed investigation of the structure of a single-phase CdSeTe epilay...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Journal of crystal growth 2008-03, Vol.310 (6), p.1081-1087
Hauptverfasser:	AMIR, F. Z, CLARK, K, MALDONADO, E, KIRK, W. P, JIANG, J. C, AGER, J. W, YU, K. M, WALUKIEWICZ, W
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Physics Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Theory and models of film growth Thin film structure and morphology
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	CdSeTe epilayers were grown by molecular beam epitaxy on (100)-oriented vicinal silicon wafers. By controlling the growth conditions, either multiple-phase or single-phase epilayers could be deposited. In this paper we present a detailed investigation of the structure of a single-phase CdSeTe epilayer using X-ray diffraction, Rutherford back scattering, and transmission electron microscopy. Photoreflectance and photocurrent results are also presented.
ISSN:	0022-0248 1873-5002
DOI:	10.1016/j.jcrysgro.2007.12.055