Low-temperature conductance mechanisms in p-Si/SiGe heterostructures in high magnetic fields

Low-temperature conductance mechanisms in p-Si/SiGe heterostructures in high magnetic fields

Low‐temperature conductance mechanism in low‐density Si/SiGe heterostructures in high magnetic fields (ultra‐quantum limit) is studied using AC and DC transport measurements. Evidence of the Wigner crystal in this regime is given. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Veröffentlicht in:Physica status solidi. C 2008-03, Vol.5 (3), p.829-834
Hauptverfasser: Drichko, I. L., Dyakonov, A. M., Smirnov, I. Yu, Suslov, A. V., Galperin, Y. M., Vinokur, V., Myronov, M., Mironov, O. A.
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73.230000000000004.−b
73.43.Qt
73.50.Rb
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container_title Physica status solidi. C
container_volume 5
creator Drichko, I. L.
Dyakonov, A. M.
Smirnov, I. Yu
Suslov, A. V.
Galperin, Y. M.
Vinokur, V.
Myronov, M.
Mironov, O. A.
description Low‐temperature conductance mechanism in low‐density Si/SiGe heterostructures in high magnetic fields (ultra‐quantum limit) is studied using AC and DC transport measurements. Evidence of the Wigner crystal in this regime is given. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
doi_str_mv 10.1002/pssc.200777555
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subjects 73.230000000000004.−b
73.43.Qt
73.50.Rb
title Low-temperature conductance mechanisms in p-Si/SiGe heterostructures in high magnetic fields
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