Highly structured TiO2/In(OH)xSy/PbS/PEDOT:PSS to be used in photovoltaic applications

A new highly structured system based on TiO2/In(OH)xSy/PbS/PEDOT:PSS/Au has been developed for photovoltaic applications. In this device, TiO2, In(OH)xSy, PbS and PEDOT:PSS serve as electron conductor, buffer layer, absorber and hole conductor, respectively. Both buffer and absorber layers have been prepared by chemical bath deposition. For annealed In(OH)xSy, an optical band gap of 2.2 eV has been obtained and for PbS the bulk value is widened to about 0.85 eV due to the presence of oxide in the film composition. At present stage, solar cells with such configuration have reached up to about 1% efficiency with Jsc=8mA/cm2 and Voc=0.3V.