The absorption factor of crystalline silicon PV cells: A numerical and experimental study

The absorption factor of a PV cell is defined as the fraction of incident solar irradiance that is absorbed by the cell. This absorption factor is one of the major parameters determining the cell temperature under operational conditions. Experimentally the absorption factor can be derived from refle...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Solar energy materials and solar cells 2008-04, Vol.92 (4), p.432-444
Hauptverfasser: Santbergen, R., van Zolingen, R.J.C.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The absorption factor of a PV cell is defined as the fraction of incident solar irradiance that is absorbed by the cell. This absorption factor is one of the major parameters determining the cell temperature under operational conditions. Experimentally the absorption factor can be derived from reflection and transmission measurements. The spectral reflection and transmission factors were measured for a set of crystalline silicon (c-Si) samples with a gradually increasing complexity. The experimental results agree very well with the results from a 2D numerical model that was developed. It was found that the AM1.5 absorption factor of a typical encapsulated c-Si photovoltaic cell is as high as 90.5%. Insight was gained in the cell parameters that influence this absorption factor. The presence of texture at the front of the c-Si wafer of sufficient steepness is essential to achieve such a high absorption factor. Sub-bandgap solar irradiance ( λ > 1.1 μ m ) is mainly absorbed in the very thin emitter by means of free-carrier absorption. By minimizing reflective losses over the entire solar spectrum, the AM1.5 absorption of c-Si cells can theoretically be increased to 93.0%. The effect on the annual yield of PV and PV/thermal systems is quantified.
ISSN:0927-0248
1879-3398
DOI:10.1016/j.solmat.2007.10.005