Suppression of the internal electric field effects in ZnO/Zn0.7Mg0.3O quantum wells by ion-implantation induced intermixing

Strong suppression of the effects caused by the internal electric field in ZnO/ZnMgO quantum wells following ion-implantation and rapid thermal annealing, is revealed by photoluminescence, time-resolved photoluminescence, and band structure calculations. The implantation and annealing induces Zn/Mg...

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Veröffentlicht in:Nanotechnology 2008-02, Vol.19 (5), p.055205-055205 (4)
Hauptverfasser: Davis, J A, Dao, L V, Wen, X, Ticknor, C, Hannaford, P, Coleman, V A, Tan, H H, Jagadish, C, Koike, K, Sasa, S, Inoue, M, Yano, M
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Sprache:eng
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Zusammenfassung:Strong suppression of the effects caused by the internal electric field in ZnO/ZnMgO quantum wells following ion-implantation and rapid thermal annealing, is revealed by photoluminescence, time-resolved photoluminescence, and band structure calculations. The implantation and annealing induces Zn/Mg intermixing, resulting in graded quantum well interfaces. This reduces the quantum-confined Stark shift and increases electron-hole wavefunction overlap, which significantly reduces the exciton lifetime and increases the oscillator strength.
ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/19/05/055205