Ga-Doped ZnS Nanowires as Precursors for ZnO/ZnGa2O4 Nanotubes

Ga-Doped ZnS Nanowires as Precursors for ZnO/ZnGa2O4 Nanotubes

Ga‐doped ZnS nanowires are used as precursors for the preparation of ZnO/ZnGa2O4 composite nanotubes, as shown in the figure. Oxidation of the nanowires induces phase separation resulting in the formation of ZnO/ZnGa2O4 phosphor heterostructures. The nanowires essentially serve as both precursors an...

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Veröffentlicht in:Advanced materials (Weinheim) 2008-02, Vol.20 (4), p.810-814
Hauptverfasser: Gautam, U. K., Bando, Y., Zhan, J., Costa, P. M. F. J., Fang, X. S., Golberg, D.
Format: Artikel
Sprache:eng
Schlagworte:
Gallium
inorganic
Nanotubes
Nanotubes, inorganic
Nanowires
Nanowires, semiconductor
semiconductor
Template-assisted synthesis
Zinc sulfide
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Zusammenfassung:Ga‐doped ZnS nanowires are used as precursors for the preparation of ZnO/ZnGa2O4 composite nanotubes, as shown in the figure. Oxidation of the nanowires induces phase separation resulting in the formation of ZnO/ZnGa2O4 phosphor heterostructures. The nanowires essentially serve as both precursors and templates for the fabrication of the nanotubes.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.200701761