Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode

Ruthenium thin films were grown by thermal and plasma-enhanced atomic layer deposition (PE-ALD) using O 2 and ammonia (NH 3) plasma, respectively. RuCp 2 and Ru(EtCp) 2 were used as Ru precursors. Pure and low resistivity (

Bibliographische Detailangaben

Veröffentlicht in:	Microelectronic engineering 2008, Vol.85 (1), p.39-44
Hauptverfasser:	Park, Sang-Joon, Kim, Woo-Hee, Lee, Han-Bo-Ram, Maeng, W.J., Kim, H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Atomic layer deposition C– V measurements Nucleation Roughness
Online-Zugang:	Volltext
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