Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode

Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode

Ruthenium thin films were grown by thermal and plasma-enhanced atomic layer deposition (PE-ALD) using O 2 and ammonia (NH 3) plasma, respectively. RuCp 2 and Ru(EtCp) 2 were used as Ru precursors. Pure and low resistivity (

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Bibliographische Detailangaben
Veröffentlicht in:Microelectronic engineering 2008, Vol.85 (1), p.39-44
Hauptverfasser: Park, Sang-Joon, Kim, Woo-Hee, Lee, Han-Bo-Ram, Maeng, W.J., Kim, H.
Format: Artikel
Sprache:eng
Schlagworte:
Atomic layer deposition
C– V measurements
Nucleation
Roughness
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Beschreibung
Zusammenfassung:Ruthenium thin films were grown by thermal and plasma-enhanced atomic layer deposition (PE-ALD) using O 2 and ammonia (NH 3) plasma, respectively. RuCp 2 and Ru(EtCp) 2 were used as Ru precursors. Pure and low resistivity (
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2007.01.239