Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
Ruthenium thin films were grown by thermal and plasma-enhanced atomic layer deposition (PE-ALD) using O 2 and ammonia (NH 3) plasma, respectively. RuCp 2 and Ru(EtCp) 2 were used as Ru precursors. Pure and low resistivity (
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| Veröffentlicht in: | Microelectronic engineering 2008, Vol.85 (1), p.39-44 |
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| creator | Park, Sang-Joon Kim, Woo-Hee Lee, Han-Bo-Ram Maeng, W.J. Kim, H. |
| description | Ruthenium thin films were grown by thermal and plasma-enhanced atomic layer deposition (PE-ALD) using O
2 and ammonia (NH
3) plasma, respectively. RuCp
2 and Ru(EtCp)
2 were used as Ru precursors. Pure and low resistivity ( |
| doi_str_mv | 10.1016/j.mee.2007.01.239 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_31904447</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0167931707003061</els_id><sourcerecordid>31904447</sourcerecordid><originalsourceid>FETCH-LOGICAL-c394t-d230582604e62ae1b1d8e0917dd99295317a10458f6ac64572904f472e3bd9783</originalsourceid><addsrcrecordid>eNp9kE1LxDAQhoMouK7-AG85eWtN2rRp8CSLX7DgZT2H2WRKs_TLpBXWX2_WevY0DPM8A-9LyC1nKWe8vD-kHWKaMSZTxtMsV2dkxSuZJ0VRVudkFRmZqJzLS3IVwoHFXbBqRfyuQd9BS6G3dGwhdECxb6A3aClMQ-cMbeGInloch-AmN_TUz1ODvZu7XwtbNJN3Jj4xDXgwE3r3Db8kBAq0wyneFmyweE0uamgD3vzNNfl4ftptXpPt-8vb5nGbmFyJKbFZzooqK5nAMgPke24rZIpLa5XKVBGzAGeiqOoSTCkKmSkmaiEzzPdWySpfk7vl7-iHzxnDpDsXDLYt9DjMQec8CkLICPIFNH4IwWOtR-868EfNmT61qw86tqtP7WrGdWw3Og-LgzHBl0Ovg3F4as35mFPbwf1j_wAbk4OG</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>31904447</pqid></control><display><type>article</type><title>Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode</title><source>Access via ScienceDirect (Elsevier)</source><creator>Park, Sang-Joon ; Kim, Woo-Hee ; Lee, Han-Bo-Ram ; Maeng, W.J. ; Kim, H.</creator><creatorcontrib>Park, Sang-Joon ; Kim, Woo-Hee ; Lee, Han-Bo-Ram ; Maeng, W.J. ; Kim, H.</creatorcontrib><description>Ruthenium thin films were grown by thermal and plasma-enhanced atomic layer deposition (PE-ALD) using O
2 and ammonia (NH
3) plasma, respectively. RuCp
2 and Ru(EtCp)
2 were used as Ru precursors. Pure and low resistivity (<20
μΩ
cm) Ru films were grown by PE-ALD as well as thermal ALD. PE-ALD Ru showed no nucleation delay on various substrates including TaN
x
, Si, and SiO
2, in contrast to thermal ALD Ru. And the root-mean-square (RMS) roughness of PE-ALD Ru was lower than that of thermal ALD Ru. Additionally, metal–oxide–semiconductor (MOS) capacitor composed of p-Si/ALD Ta
2O
5/ALD Ru (35
nm) was fabricated and
C–
V measurements were performed for as-deposited sample. Very small hysteresis of 20
mV was obtained, and effective work function difference to Si substrate was minimal as −0.03
V. For comparison, MOS capacitor was fabricated using sputtered Ru and large hysteresis of 0.5
V and flat band voltage (
V
FB) shift to negative value were observed. This result indicates that ALD process produces more reliable, damage free Ru gate compared to sputtering process.</description><identifier>ISSN: 0167-9317</identifier><identifier>EISSN: 1873-5568</identifier><identifier>DOI: 10.1016/j.mee.2007.01.239</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Atomic layer deposition ; C– V measurements ; Nucleation ; Roughness</subject><ispartof>Microelectronic engineering, 2008, Vol.85 (1), p.39-44</ispartof><rights>2007 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c394t-d230582604e62ae1b1d8e0917dd99295317a10458f6ac64572904f472e3bd9783</citedby><cites>FETCH-LOGICAL-c394t-d230582604e62ae1b1d8e0917dd99295317a10458f6ac64572904f472e3bd9783</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.mee.2007.01.239$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,4024,27923,27924,27925,45995</link.rule.ids></links><search><creatorcontrib>Park, Sang-Joon</creatorcontrib><creatorcontrib>Kim, Woo-Hee</creatorcontrib><creatorcontrib>Lee, Han-Bo-Ram</creatorcontrib><creatorcontrib>Maeng, W.J.</creatorcontrib><creatorcontrib>Kim, H.</creatorcontrib><title>Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode</title><title>Microelectronic engineering</title><description>Ruthenium thin films were grown by thermal and plasma-enhanced atomic layer deposition (PE-ALD) using O
2 and ammonia (NH
3) plasma, respectively. RuCp
2 and Ru(EtCp)
2 were used as Ru precursors. Pure and low resistivity (<20
μΩ
cm) Ru films were grown by PE-ALD as well as thermal ALD. PE-ALD Ru showed no nucleation delay on various substrates including TaN
x
, Si, and SiO
2, in contrast to thermal ALD Ru. And the root-mean-square (RMS) roughness of PE-ALD Ru was lower than that of thermal ALD Ru. Additionally, metal–oxide–semiconductor (MOS) capacitor composed of p-Si/ALD Ta
2O
5/ALD Ru (35
nm) was fabricated and
C–
V measurements were performed for as-deposited sample. Very small hysteresis of 20
mV was obtained, and effective work function difference to Si substrate was minimal as −0.03
V. For comparison, MOS capacitor was fabricated using sputtered Ru and large hysteresis of 0.5
V and flat band voltage (
V
FB) shift to negative value were observed. This result indicates that ALD process produces more reliable, damage free Ru gate compared to sputtering process.</description><subject>Atomic layer deposition</subject><subject>C– V measurements</subject><subject>Nucleation</subject><subject>Roughness</subject><issn>0167-9317</issn><issn>1873-5568</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LxDAQhoMouK7-AG85eWtN2rRp8CSLX7DgZT2H2WRKs_TLpBXWX2_WevY0DPM8A-9LyC1nKWe8vD-kHWKaMSZTxtMsV2dkxSuZJ0VRVudkFRmZqJzLS3IVwoHFXbBqRfyuQd9BS6G3dGwhdECxb6A3aClMQ-cMbeGInloch-AmN_TUz1ODvZu7XwtbNJN3Jj4xDXgwE3r3Db8kBAq0wyneFmyweE0uamgD3vzNNfl4ftptXpPt-8vb5nGbmFyJKbFZzooqK5nAMgPke24rZIpLa5XKVBGzAGeiqOoSTCkKmSkmaiEzzPdWySpfk7vl7-iHzxnDpDsXDLYt9DjMQec8CkLICPIFNH4IwWOtR-868EfNmT61qw86tqtP7WrGdWw3Og-LgzHBl0Ovg3F4as35mFPbwf1j_wAbk4OG</recordid><startdate>2008</startdate><enddate>2008</enddate><creator>Park, Sang-Joon</creator><creator>Kim, Woo-Hee</creator><creator>Lee, Han-Bo-Ram</creator><creator>Maeng, W.J.</creator><creator>Kim, H.</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>2008</creationdate><title>Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode</title><author>Park, Sang-Joon ; Kim, Woo-Hee ; Lee, Han-Bo-Ram ; Maeng, W.J. ; Kim, H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c394t-d230582604e62ae1b1d8e0917dd99295317a10458f6ac64572904f472e3bd9783</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Atomic layer deposition</topic><topic>C– V measurements</topic><topic>Nucleation</topic><topic>Roughness</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Park, Sang-Joon</creatorcontrib><creatorcontrib>Kim, Woo-Hee</creatorcontrib><creatorcontrib>Lee, Han-Bo-Ram</creatorcontrib><creatorcontrib>Maeng, W.J.</creatorcontrib><creatorcontrib>Kim, H.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microelectronic engineering</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Park, Sang-Joon</au><au>Kim, Woo-Hee</au><au>Lee, Han-Bo-Ram</au><au>Maeng, W.J.</au><au>Kim, H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode</atitle><jtitle>Microelectronic engineering</jtitle><date>2008</date><risdate>2008</risdate><volume>85</volume><issue>1</issue><spage>39</spage><epage>44</epage><pages>39-44</pages><issn>0167-9317</issn><eissn>1873-5568</eissn><abstract>Ruthenium thin films were grown by thermal and plasma-enhanced atomic layer deposition (PE-ALD) using O
2 and ammonia (NH
3) plasma, respectively. RuCp
2 and Ru(EtCp)
2 were used as Ru precursors. Pure and low resistivity (<20
μΩ
cm) Ru films were grown by PE-ALD as well as thermal ALD. PE-ALD Ru showed no nucleation delay on various substrates including TaN
x
, Si, and SiO
2, in contrast to thermal ALD Ru. And the root-mean-square (RMS) roughness of PE-ALD Ru was lower than that of thermal ALD Ru. Additionally, metal–oxide–semiconductor (MOS) capacitor composed of p-Si/ALD Ta
2O
5/ALD Ru (35
nm) was fabricated and
C–
V measurements were performed for as-deposited sample. Very small hysteresis of 20
mV was obtained, and effective work function difference to Si substrate was minimal as −0.03
V. For comparison, MOS capacitor was fabricated using sputtered Ru and large hysteresis of 0.5
V and flat band voltage (
V
FB) shift to negative value were observed. This result indicates that ALD process produces more reliable, damage free Ru gate compared to sputtering process.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.mee.2007.01.239</doi><tpages>6</tpages></addata></record> |
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| ispartof | Microelectronic engineering, 2008, Vol.85 (1), p.39-44 |
| issn | 0167-9317 1873-5568 |
| language | eng |
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| source | Access via ScienceDirect (Elsevier) |
| subjects | Atomic layer deposition C– V measurements Nucleation Roughness |
| title | Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode |
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