Three-dimensional phototransistors in 3D silicon-on-insulator technology

Measurement results of phototransistors designed in a three-dimensional (3D) 0.18mum silicon-on-insulator technology are presented. The phototransistors respond to light intensities of 5-200000lux with currents from 50fA to 2.3muA. The novelty of this phototransistor is that its photocurrent is prop...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Electronics letters 2007-03, Vol.43 (7), p.418-420
1. Verfasser:	CULURCIELLO, E
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Design. Technologies. Operation analysis. Testing Electronics Exact sciences and technology Integrated circuits Optoelectronic devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!