Optical nonlinearity of oxygen-rich SiOx thin films

Optical nonlinearity of oxygen-rich SiOx thin films

Highly oxygen-rich SiOx thin films were prepared using a helicon plasma activated reactive evaporation technique. A small second-order optical nonlinearity was observed in the as-grown films, and thermal poling induced nonlinearity in the films was found to be much larger than that in stoichiometric...

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Veröffentlicht in:Electronics letters 2007-02, Vol.43 (4), p.235-237
Hauptverfasser: LI, W. T, BOSWELL, R, SAMOC, M, SAMOC, A, QIN, Q. H
Format: Artikel
Sprache:eng
Schlagworte:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Insulators
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
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Zusammenfassung:Highly oxygen-rich SiOx thin films were prepared using a helicon plasma activated reactive evaporation technique. A small second-order optical nonlinearity was observed in the as-grown films, and thermal poling induced nonlinearity in the films was found to be much larger than that in stoichiometric SiO2 films. These phenomena were associated with the non-impurity defects in the oxygen-rich films.
ISSN:0013-5194
1350-911X
DOI:10.1049/el:20073668